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the last one thx you so so so much
by two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make higher microwave fre- quencies feasible with a corresponding increase in sensitiv- ity.We note that oscillators and mixers can be realized up to several GHz on silicon substrates and several tens of GHz on GaAs substrates.It should be possible to fabricate a large array of sensitive detectors monolithically integrated with their associated electronics.

提问时间:2021-01-02

答案
由二个数量级.不幸地,硅体的粗劣的抵抗力不允许对甚高频的用途.对一个高的抵抗力GaAs 基体的用途以更低的rf 损失将使更高的微波fre- quencies 可行以在sensitiv- 的对应的增量ity .我们注意到,摆动器和搅拌器可能体...
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